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| VISHAY TCMT11.. Series/ TCMT4100 Vishay Semiconductors Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package Features * * * * * * Low profile package (half pitch) AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF Current Transfer Ratio (CTR) selected into groups Low temperature coefficient of CTR Wide ambient temperature range 16467 C E 9 Agency Approvals * UL File #E76222 System Code M * C-UL CSA 22.2 bulletin 5A, Double Protection 1 A 2 C 4 PIN 16 PIN 8 Applications Programmable logic controllers, modems, answering machines, general applications C Description The TCMT11.. Series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4- pin (single channel) up to 16- pin (quad channel) package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. Order Information Part TCMT1100 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 TCMT4100 Remarks CTR 50 - 600 %, SMD-4 CTR 63 - 125 %, SMD-4 CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, SMD-4 CTR 50 - 150 %, SMD-4 CTR 100 - 300 %, SMD-4 CTR 80 - 160 %, SMD-4 CTR 130 - 260 %, SMD-4 CTR 200 - 400 %, SMD-4 CTR 50 - 600 %, SMD-16 Document Number 83510 Rev. 1.4, 19-Nov-03 www.vishay.com 1 TCMT11.. Series/ TCMT4100 Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature tp 10 s Test condition Symbol VR IF IFSM Pdiss Tj Value 6 60 1.5 100 125 Unit V mA A mW C Output Parameter Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature tp/T = 0.5, tp 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature Test condition Related to standard climate 23/ 50 DIN 50014 Symbol VISO Ptot Tamb Tstg Tsld Value 3750 250 - 40 to + 100 - 40 to + 100 235 Unit VRMS mW C C C Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF www.vishay.com 2 Document Number 83510 Rev. 1.4, 19-Nov-03 VISHAY Output Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 100 A IE = 100 A VCE = 20 V, IF = 0, E = 0 TCMT11.. Series/ TCMT4100 Vishay Semiconductors Symbol VCEO VECO ICEO Min 70 7 Typ. Max Unit V V 100 nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 f = 1 MHz Symbol VCEsat fc Ck 100 0.3 Min Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA Part TCMT1100 TCMT1102 TCMT1103 TCMT1104 VCE = 5 V, IF = 5 mA TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109 TCMT4100 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR Min 50 53 100 160 50 100 80 130 200 50 Typ. Max 600 125 200 320 150 300 160 260 400 600 Unit % % % % % % % % % % Document Number 83510 Rev. 1.4, 19-Nov-03 www.vishay.com 3 TCMT11.. Series/ TCMT4100 Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test condition VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2) VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2) Symbol td tr tf ts ton toff ton toff Min Typ. 3.0 3.0 4.7 0.3 6.0 5.0 9.0 18.0 Max VISHAY Unit s s s s s s s s IF 0 IF IF +5V IC = 2 mA; adjusted through input amplitude 96 11698 0 IC 100% 90% tp t RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 95 10804 tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 1. Test circuit, non-saturated operation Figure 3. Switching times 0 IF IF = 10 mA +5V IC RG = 50 tp = 0.01 T tp = 50 s Channel I Channel II 50 1 k Oscilloscope RL 1M CL 20 pF 95 10843 Figure 2. Test circuit, saturated operation www.vishay.com 4 Document Number 83510 Rev. 1.4, 19-Nov-03 VISHAY TCMT11.. Series/ TCMT4100 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot -Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 1000 V CE = 20 V IF = 0 150 IR-diode 100 50 0 0 40 80 120 100 10 1 Tamb - Ambient T emperature( C ) 95 11026 0 25 50 75 100 96 1 1700 Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current ( mA ) 1000.0 I F - Forward Current ( mA ) V CE=5V 10 100.0 10.0 1 1.0 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11027 1 10 100 V F - Forward Voltage ( V ) I F - Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current CTRrel - Relative Current Transfer Ratio 2.0 IC - Collector Current ( mA) 100 V CE=5V I F=5mA 20mA I F=50mA 10 10mA 5mA 1 2mA 1mA 0.1 0.1 95 10985 1.5 1.0 0.5 0 -25 0 25 50 75 1 10 100 95 11025 Tamb - Ambient Temperature ( C ) V CE - Collector Emitter Voltage ( V ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 9. Collector Current vs. Collector Emitter Voltage Document Number 83510 Rev. 1.4, 19-Nov-03 www.vishay.com 5 TCMT11.. Series/ TCMT4100 Vishay Semiconductors VCEsat- Collector Emitter Saturation Voltage ( V) VISHAY ton / toff -Turn on / Turn off Time ( s ) 1.0 20% 0.8 CTR=50% 0.6 0.4 0.2 0 1 10 I C - Collector Current ( mA ) 10 8 6 toff 4 2 0 0 2 4 6 10 Non Saturated Operation V S=5V RL=100 ton 10% 100 95 11028 95 11030 I C - Collector Current ( mA ) Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1000 V CE=5V 100 Figure 13. Turn on / off Time vs. Collector Current CTR - Current Transfer Ratio ( % ) 10 1 0.1 95 11029 1 10 100 I F - Forward Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current ton / toff -Turn on / Turn off Time ( s ) 50 40 30 toff 20 10 0 0 5 10 15 ton 20 Saturated Operation V S=5V RL=1k 95 11031 I F - Forward Current ( mA ) Figure 12. Turn on / off Time vs. Forward Current www.vishay.com 6 Document Number 83510 Rev. 1.4, 19-Nov-03 VISHAY Package Dimension of TCMT1... in mm TCMT11.. Series/ TCMT4100 Vishay Semiconductors 16283 Document Number 83510 Rev. 1.4, 19-Nov-03 www.vishay.com 7 TCMT11.. Series/ TCMT4100 Vishay Semiconductors Package Dimension of TCMT4...in mm VISHAY 15226 www.vishay.com 8 Document Number 83510 Rev. 1.4, 19-Nov-03 VISHAY TCMT11.. Series/ TCMT4100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83510 Rev. 1.4, 19-Nov-03 www.vishay.com 9 |
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